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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB722 DESCRIPTION *With TO-3 package *High current capability *High power dissipation APPLICATIONS *For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A IC=-2A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V 50 MIN -160 -160 -5 2SB722 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE TYP. MAX UNIT V V V -3.0 -1.5 -0.1 -0.1 V V mA mA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB722 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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